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IBM and Samsung Detail ‘breakthrough’ Vertical Transistor Architecture

IBM Corp. and Samsung Electronics Co. Ltd. on Tuesday detailed a new transistor architecture that they believe could provide twice the performance of current technology using the same amount of electricity. The architecture is known as VTFET, short for Vertical-Transport Nanosheet Field Effect Transistor. IBM is touting the technology as a “breakthrough in semiconductor design.” […]

The post IBM and Samsung detail ‘breakthrough’ vertical transistor architecture appeared first on SiliconANGLE.


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