Connect with us

Hi, what are you looking for?

Science

IBM and Samsung Detail ‘breakthrough’ Vertical Transistor Architecture

IBM Corp. and Samsung Electronics Co. Ltd. on Tuesday detailed a new transistor architecture that they believe could provide twice the performance of current technology using the same amount of electricity. The architecture is known as VTFET, short for Vertical-Transport Nanosheet Field Effect Transistor. IBM is touting the technology as a “breakthrough in semiconductor design.” […]

The post IBM and Samsung detail ‘breakthrough’ vertical transistor architecture appeared first on SiliconANGLE.

Source: siliconangle.com

Click to comment

Leave a Reply

Your email address will not be published. Required fields are marked *

You May Also Like

Science

A very moving video. If only everyone who thinks they don’t need to be vaccinated could be in this woman’s place, or that of...

Health Care

Interested families are encouraged to register online for one of two dates in November and December. Original Post: theday.com

Arts & Entertainment

Read Debbie Millman’s exclusive foreword to our new book ‘Fast Company Innovation by Design: Creative Ideas That Transform The Way We Live and Work,’...

Science

India and Pakistan are facing off today in a Twenty20 World Cup cricket match in Dubai. Here’s how you can watch the Ind vs...

NewsUpdate365.com